Studies on CdTe solar cell front contact properties using X-ray photoelectron spectroscopy
Identifieur interne : 000463 ( Main/Repository ); précédent : 000462; suivant : 000464Studies on CdTe solar cell front contact properties using X-ray photoelectron spectroscopy
Auteurs : RBID : Pascal:13-0350525Descripteurs français
- Pascal (Inist)
- Cellule solaire, Spectre photoélectron RX, Oxyde d'indium, Oxyde d'étain, Dépôt sous vide, Sublimation, Mécanisme croissance, Creuset, Semiconducteur II-VI, Profil profondeur, Recuit, Diffusion(transport), Indium, Couche tampon, Interface, Propriété chimique, Propriété électronique, Sulfure de cadmium, Couche mince, Chlorure, Dépôt phase vapeur, Substrat CdTe, CdS, SnO2, CdTe, CdCl2, 8460J, 8115E, 6855A, 8105D.
English descriptors
- KwdEn :
- Annealing, Buffer layer, Cadmium sulfide, Chemical properties, Chlorides, Crucible, Depth profile, Diffusion, Electronic properties, Growth mechanism, II-VI semiconductors, Indium, Indium oxide, Interface, Solar cell, Sublimation, Thin film, Tin oxide, Vacuum deposition, Vapor deposition, X-ray photoelectron spectra.
Abstract
The chemical changes between transparent conducting oxide (TCO) and cadmium sulphide (CdS) layers were analyzed using X-ray photoelectron spectroscopy (XPS). Commercially available indium tin oxide (ITO) and ITO/SnO2 were used as substrates. The CdS layers were deposited in vacuum (∼10-2 Pa) at two different (low and high) substrate temperatures by close spaced sublimation technique. During the growth of CdS layer, the substrate temperature was increased from 25 to 250 °C for low temperature layer and from 490 to 550 °C for high temperature CdS layer due to the high crucible temperature. Similar to CdTe solar cell device process steps, the samples (TCO/CdS) were annealed in vacuum (10-2 Pa) at 520 °C and in air at 375 °C with and without CdCl2. The XPS depth profile analysis shows that annealing ITO/CdS sample in vacuum induces diffusion of indium into the CdS layer from ITO. The most of the diffused indium atoms are found on top of the CdS layer. No indium diffusion into the CdS layer was observed for the TCO with SnO2 buffer layer between ITO and CdS. However, at SnO2/CdS interface Cd atoms diffuse into the SnO2 buffer layer after CdCl2 activation. The change in chemical and electronic properties of the ITO/CdS and ITO/ SnO2/CdS interfaces is discussed in detail.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Studies on CdTe solar cell front contact properties using X-ray photoelectron spectroscopy</title><author><name sortKey="Krishnakumar, V" uniqKey="Krishnakumar V">V. Krishnakumar</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstrasse 23</s1><s2>64287</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Klein, A" uniqKey="Klein A">A. Klein</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstrasse 23</s1><s2>64287</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Jaegermann, W" uniqKey="Jaegermann W">W. Jaegermann</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstrasse 23</s1><s2>64287</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0350525</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0350525 INIST</idno><idno type="RBID">Pascal:13-0350525</idno><idno type="wicri:Area/Main/Corpus">000533</idno><idno type="wicri:Area/Main/Repository">000463</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Buffer layer</term><term>Cadmium sulfide</term><term>Chemical properties</term><term>Chlorides</term><term>Crucible</term><term>Depth profile</term><term>Diffusion</term><term>Electronic properties</term><term>Growth mechanism</term><term>II-VI semiconductors</term><term>Indium</term><term>Indium oxide</term><term>Interface</term><term>Solar cell</term><term>Sublimation</term><term>Thin film</term><term>Tin oxide</term><term>Vacuum deposition</term><term>Vapor deposition</term><term>X-ray photoelectron spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term><term>Spectre photoélectron RX</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Dépôt sous vide</term><term>Sublimation</term><term>Mécanisme croissance</term><term>Creuset</term><term>Semiconducteur II-VI</term><term>Profil profondeur</term><term>Recuit</term><term>Diffusion(transport)</term><term>Indium</term><term>Couche tampon</term><term>Interface</term><term>Propriété chimique</term><term>Propriété électronique</term><term>Sulfure de cadmium</term><term>Couche mince</term><term>Chlorure</term><term>Dépôt phase vapeur</term><term>Substrat CdTe</term><term>CdS</term><term>SnO2</term><term>CdTe</term><term>CdCl2</term><term>8460J</term><term>8115E</term><term>6855A</term><term>8105D</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The chemical changes between transparent conducting oxide (TCO) and cadmium sulphide (CdS) layers were analyzed using X-ray photoelectron spectroscopy (XPS). Commercially available indium tin oxide (ITO) and ITO/SnO<sub>2</sub> were used as substrates. The CdS layers were deposited in vacuum (∼10<sup>-2</sup> Pa) at two different (low and high) substrate temperatures by close spaced sublimation technique. During the growth of CdS layer, the substrate temperature was increased from 25 to 250 °C for low temperature layer and from 490 to 550 °C for high temperature CdS layer due to the high crucible temperature. Similar to CdTe solar cell device process steps, the samples (TCO/CdS) were annealed in vacuum (10<sup>-2</sup> Pa) at 520 °C and in air at 375 °C with and without CdCl<sub>2</sub>. The XPS depth profile analysis shows that annealing ITO/CdS sample in vacuum induces diffusion of indium into the CdS layer from ITO. The most of the diffused indium atoms are found on top of the CdS layer. No indium diffusion into the CdS layer was observed for the TCO with SnO<sub>2</sub> buffer layer between ITO and CdS. However, at SnO<sub>2</sub>/CdS interface Cd atoms diffuse into the SnO<sub>2</sub> buffer layer after CdCl<sub>2</sub> activation. The change in chemical and electronic properties of the ITO/CdS and ITO/ SnO<sub>2</sub>/CdS interfaces is discussed in detail.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>545</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Studies on CdTe solar cell front contact properties using X-ray photoelectron spectroscopy</s1></fA08><fA11 i1="01" i2="1"><s1>KRISHNAKUMAR (V.)</s1></fA11><fA11 i1="02" i2="1"><s1>KLEIN (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>JAEGERMANN (W.)</s1></fA11><fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstrasse 23</s1><s2>64287</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>548-557</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504221210910</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>36 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0350525</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The chemical changes between transparent conducting oxide (TCO) and cadmium sulphide (CdS) layers were analyzed using X-ray photoelectron spectroscopy (XPS). Commercially available indium tin oxide (ITO) and ITO/SnO<sub>2</sub> were used as substrates. The CdS layers were deposited in vacuum (∼10<sup>-2</sup> Pa) at two different (low and high) substrate temperatures by close spaced sublimation technique. During the growth of CdS layer, the substrate temperature was increased from 25 to 250 °C for low temperature layer and from 490 to 550 °C for high temperature CdS layer due to the high crucible temperature. Similar to CdTe solar cell device process steps, the samples (TCO/CdS) were annealed in vacuum (10<sup>-2</sup> Pa) at 520 °C and in air at 375 °C with and without CdCl<sub>2</sub>. The XPS depth profile analysis shows that annealing ITO/CdS sample in vacuum induces diffusion of indium into the CdS layer from ITO. The most of the diffused indium atoms are found on top of the CdS layer. No indium diffusion into the CdS layer was observed for the TCO with SnO<sub>2</sub> buffer layer between ITO and CdS. However, at SnO<sub>2</sub>/CdS interface Cd atoms diffuse into the SnO<sub>2</sub> buffer layer after CdCl<sub>2</sub> activation. The change in chemical and electronic properties of the ITO/CdS and ITO/ SnO<sub>2</sub>/CdS interfaces is discussed in detail.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15E</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15A</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Solar cell</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Célula solar</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Indium oxide</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Indio óxido</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Oxyde 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